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Now downloading free:CET cep16n10l ceb16n10l

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File name:cep16n10l_ceb16n10l.pdf
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Descr: . Electronic Components Datasheets Active components Transistors CET cep16n10l_ceb16n10l.pdf
Group:Electronics > Components > Transistors
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CEP16N10L/CEB16N10L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 115m @VGS = 10V. RDS(ON) = 125m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. D G G G D S S CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS

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